Datasheet LT1158 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | Half Bridge N-Channel Power MOSFET Driver |
| Páginas / Página | 22 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply … |
| Formato / tamaño de archivo | PDF / 250 Kb |
| Idioma del documento | Inglés |
ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply over the full operating
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LT1158
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test Circuit, V+ = V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4 open, Gate Feedback pins connected to Gate Drive pins unless otherwise specifi ed. LT1158I LT1158C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
I2 + I10 DC Supply Current (Note 2) V+ = 30V, V16 = 15V, V4 = 0.5V 2.2 3 2.2 3 mA V+ = 30V, V16 = 15V, V6 = 0.8V 4.5 7 10 4.5 7 10 mA V+ = 30V, V16 = 15V, V6 = 2V 8 13 18 8 13 18 mA I16 Boost Current V+ = V13 = 30V, V16 = 45V, V6 = 0.8V 3 4.5 3 4.5 mA V6 Input Threshold l 0.8 1.4 2 0.8 1.4 2 V I6 Input Current V6 = 5V l 5 15 5 15 μA V4 Enable Low Threshold V6 = 0.8V, Monitor V9 l 0.9 1.15 1.4 0.85 1.15 1.4 V ΔV4 Enable Hysteresis V6 = 0.8V, Monitor V9 l 1.3 1.5 1.7 1.2 1.5 1.8 V I4 Enable Pullup Current V4 = 0V l 15 25 35 15 25 35 μA V15 Charge Pump Voltage V+ = 5V, V6 = 2V, Pin 16 open, V13 → 5V l 9 11 9 11 V V+ = 30V, V6 = 2V, Pin16 open, V13 → 30V l 40 43 47 40 43 47 V V9 Bottom Gate “ON” Voltage V+ = V16 = 18V, V6 = 0.8V l 12 14.5 17 12 14.5 17 V V1 Boost Drive Voltage V+ = V16 = 18V, V6 = 0.8V, 100mA Pulsed Load l 12 14.5 17 12 14.5 17 V V14 – V13 Top Turn-Off Threshold V+ = V16 = 5V, V6 = 0.8V 1 1.75 2.5 1 1.75 2.5 V V8 Bottom Turn-Off Threshold V+ = V16 = 5V, V6 = 2V 1 1.5 2 1 1.5 2 V I5 Fault Output Leakage V+ = 30V, V16 = 15V, V6 = 2V l 0.1 1 0.1 1 μA V5 Fault Output Saturation V+ = 30V, V16 = 15V, V6 = 2V, I5 = 10mA 0.5 1 0.5 1 V V12 – V11 Fault Conduction Threshold V+ = 30V, V16 = 15V, V6 = 2V, I5 = 100μA 90 110 130 85 110 135 mV V12 – V11 Current Limit Threshold V+ = 30V, V16 = 15V, V6 = 2V, Closed Loop 130 150 170 120 150 180 mV l 120 180 120 180 mV V12 – V11 Current Limit Inhibit V+ = V12 = 12V, V6 = 2V, Decrease V11 1.1 1.25 1.4 1.1 1.25 1.4 V VDS Threshold Until V15 Goes Low tR Top Gate Rise Time Pin 6 (+) Transition, Meas. V15 – V13 (Note 4) l 130 250 130 250 ns tD Top Gate Turn-Off Delay Pin 6 (–) Transition, Meas. V15 – V13 (Note 4) l 350 550 350 550 ns tF Top Gate Fall Time Pin 6 (–) Transition, Meas. V15 – V13 (Note 4) l 120 250 120 250 ns tR Bottom Gate Rise Time Pin 6 (–) Transition, Meas. V9 (Note 4) l 130 250 130 250 ns tD Bottom Gate Turn-Off Delay Pin 6 (+) Transition, Meas. V9 (Note 4) l 200 400 200 400 ns tF Bottom Gate Fall Time Pin 6 (+) Transition, Meas. V9 (Note 4) l 100 200 100 200 ns
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Dynamic supply current is higher due to the gate charge may cause permanent damage to the device. Exposure to any Absolute being delivered at the switching frequency. See typical performance Maximum Rating condition for extended periods may affect device characteristics and applications information. reliability and lifetime.
Note 4:
Gate rise times are measured from 2V to 10V, delay times are
Note 2:
TJ is calculated from the ambient temperature TA and power measured from the input transition to when the gate voltage has decreased dissipation PD according to the following formulas: to 10V, and fall times are measured from 10V to 2V. LT1158IN, LT1158CN: TJ = TA + (PD × 70°C/W) LT1158ISW, LT1158CSW: TJ = TA + (PD × 110°C/W) 1158fb 3
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. Test Circuit, V+ = V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4 open, Gate Feedback pins connected to Gate Drive pins unless otherwise specifi ed. LT1158I LT1158C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
I2 + I10 DC Supply Current (Note 2) V+ = 30V, V16 = 15V, V4 = 0.5V 2.2 3 2.2 3 mA V+ = 30V, V16 = 15V, V6 = 0.8V 4.5 7 10 4.5 7 10 mA V+ = 30V, V16 = 15V, V6 = 2V 8 13 18 8 13 18 mA I16 Boost Current V+ = V13 = 30V, V16 = 45V, V6 = 0.8V 3 4.5 3 4.5 mA V6 Input Threshold l 0.8 1.4 2 0.8 1.4 2 V I6 Input Current V6 = 5V l 5 15 5 15 μA V4 Enable Low Threshold V6 = 0.8V, Monitor V9 l 0.9 1.15 1.4 0.85 1.15 1.4 V ΔV4 Enable Hysteresis V6 = 0.8V, Monitor V9 l 1.3 1.5 1.7 1.2 1.5 1.8 V I4 Enable Pullup Current V4 = 0V l 15 25 35 15 25 35 μA V15 Charge Pump Voltage V+ = 5V, V6 = 2V, Pin 16 open, V13 → 5V l 9 11 9 11 V V+ = 30V, V6 = 2V, Pin16 open, V13 → 30V l 40 43 47 40 43 47 V V9 Bottom Gate “ON” Voltage V+ = V16 = 18V, V6 = 0.8V l 12 14.5 17 12 14.5 17 V V1 Boost Drive Voltage V+ = V16 = 18V, V6 = 0.8V, 100mA Pulsed Load l 12 14.5 17 12 14.5 17 V V14 – V13 Top Turn-Off Threshold V+ = V16 = 5V, V6 = 0.8V 1 1.75 2.5 1 1.75 2.5 V V8 Bottom Turn-Off Threshold V+ = V16 = 5V, V6 = 2V 1 1.5 2 1 1.5 2 V I5 Fault Output Leakage V+ = 30V, V16 = 15V, V6 = 2V l 0.1 1 0.1 1 μA V5 Fault Output Saturation V+ = 30V, V16 = 15V, V6 = 2V, I5 = 10mA 0.5 1 0.5 1 V V12 – V11 Fault Conduction Threshold V+ = 30V, V16 = 15V, V6 = 2V, I5 = 100μA 90 110 130 85 110 135 mV V12 – V11 Current Limit Threshold V+ = 30V, V16 = 15V, V6 = 2V, Closed Loop 130 150 170 120 150 180 mV l 120 180 120 180 mV V12 – V11 Current Limit Inhibit V+ = V12 = 12V, V6 = 2V, Decrease V11 1.1 1.25 1.4 1.1 1.25 1.4 V VDS Threshold Until V15 Goes Low tR Top Gate Rise Time Pin 6 (+) Transition, Meas. V15 – V13 (Note 4) l 130 250 130 250 ns tD Top Gate Turn-Off Delay Pin 6 (–) Transition, Meas. V15 – V13 (Note 4) l 350 550 350 550 ns tF Top Gate Fall Time Pin 6 (–) Transition, Meas. V15 – V13 (Note 4) l 120 250 120 250 ns tR Bottom Gate Rise Time Pin 6 (–) Transition, Meas. V9 (Note 4) l 130 250 130 250 ns tD Bottom Gate Turn-Off Delay Pin 6 (+) Transition, Meas. V9 (Note 4) l 200 400 200 400 ns tF Bottom Gate Fall Time Pin 6 (+) Transition, Meas. V9 (Note 4) l 100 200 100 200 ns
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Dynamic supply current is higher due to the gate charge may cause permanent damage to the device. Exposure to any Absolute being delivered at the switching frequency. See typical performance Maximum Rating condition for extended periods may affect device characteristics and applications information. reliability and lifetime.
Note 4:
Gate rise times are measured from 2V to 10V, delay times are
Note 2:
TJ is calculated from the ambient temperature TA and power measured from the input transition to when the gate voltage has decreased dissipation PD according to the following formulas: to 10V, and fall times are measured from 10V to 2V. LT1158IN, LT1158CN: TJ = TA + (PD × 70°C/W) LT1158ISW, LT1158CSW: TJ = TA + (PD × 110°C/W) 1158fb 3