Datasheet E522.80, E522.81, E522.82, E522.83 (Elmos) - 8

FabricanteElmos
DescripciónTriple 150mA Linear LED Controller
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Notes on table section RUN Interface and Diagnostics

Notes on table section RUN Interface and Diagnostics

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Triple 150mA Linear LED Controller E522.80/81/82/83 Production Data - May 5, 2017 Electrical Characteristics (continued) (VVS = 5V to 25V, TJ= -40°C to 150°C and recommended operating range, unless otherwise noted. Typical values are at VVS = 14V and TJ = 25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit RUN Interface and Diagnostics RUN Pin Pull up Current to VS VVS = 14V VRUN = 0V IRUN,PU - 40 µA RUN Bus Comparator,High Threshold VRUN,ENA 2.7 3 3.3 V RUN Bus Comparator, Low Threshold VRUN,STBY 2.25 2.55 2.85 V Hysteresis for RUN Thresholds VRUN,ENA - VRUN,STBY VRUN,HYST 250 450 mV RUN State Change Debouncing*) Rising and falling edge tRUN,DEL 4 µs RUN Low Level, Nominal VVS = 14V IRUN = 2mA VRUN,DRV1 0.2 0.8 V VS Pin ‘open’ RUN Low Level, low VS or VS Open IRUN = 2mA VRUN,DRV2 1.4 2 V TJ < 125°C Current Limitation for RUN driving 'low' VRUN = 5V IRUN,LIM 10 22 mA LEDx Short Circuit Detection Threshold Relative to VGND VLEDx,SHORT 0.9 1 1.1 V Open Detection Threshold at LEDx, relative to RIRx = 12kΩ nominal configured current VENA > 3V 1) ILEDx,OPEN 27.5 37.5 47.5 % Open Diagnostic Enable Threshold at VS for E522.80 1) E522.80 VVS rising VVS,DIAG1 7.1 7.5 7.9 V Open Diagnostic Enable Threshold at VS for E522.81 1) E522.81 VVS rising VVS,DIAG2 8.55 9 9.45 V Open Diagnostic Enable Threshold at VS for E522.82 1) E522.82 VVS rising VVS,DIAG3 9.5 10 10.5 V Open Diagnostic Enable Threshold at VS for E522.83 1) E522.83 VVS rising VVS,DIAG4 14.2 15 15.8 V Open Diagnostic Enable Threshold at VS, Hys- teresis VVS falling VVS,DIAG,HYST 0.5 V IRx Pin Open Diagnostic Threshold absolute value IIR,OPEN 9 18 µA IRx pin short circuit Diagnostic Threshold absolute value IIR,SHORT 280 380 µA Error Tolerance after Enabling a Channel VENA > VENA,ON VIR < VIR,DIS 2) tERR,DEB1 64 µs Additional Debouncing Time in case of Error De- New Error de- tection during Operation*) tected tERR,DEB2 4 µs Re-Diagnosis time out in case of Error ERR present, Detection E522.8x operated tERR,REDIAG 4.1 5.9 9.1 ms undimmed 3) *) Not tested in production
Notes on table section RUN Interface and Diagnostics
1) threshold is related to nominal current generated at IRx input. This diagnosis is active for VVS voltages higher than VVS,DIAGx 2) start up of a channel is performed within this tolerance time window 3) dimming the erroneous channel resets the according channels re-diagnostic cycle, thus a re-diagnostic is performed with the next enabling of the channel Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0132E.03 8/25