Datasheet 1N5711, 1N5712, 5082-2300, 5082-2800, 5082-2900 (Avago Technologies) - 4
| Fabricante | Avago Technologies |
| Descripción | Schottky Barrier Diodes for General Purpose Applications |
| Páginas / Página | 6 / 4 — Typical Parameters. 100. 10.000. 1000. 1,000. (nA). I R. TA = 25. 0.1. … |
| Formato / tamaño de archivo | PDF / 58 Kb |
| Idioma del documento | Inglés |
Typical Parameters. 100. 10.000. 1000. 1,000. (nA). I R. TA = 25. 0.1. –50. - FORWARD CURRENT (mA). - DYNAMIC RESISTANCE (. I F. 0.01. 0.10. 0.20. 0.30
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4
Typical Parameters 100 10.000 1000 100 )
Ω
10 1,000 75 50 100
°
C 1 100 100 50
°
C (nA) 25 25
°
C I R 0
°
C TA = 25
°
C 0.1 10 –50
°
C - FORWARD CURRENT (mA) - DYNAMIC RESISTANCE ( I F DR 0.01 1 10 0 0.10 0.20 0.30 0.40 0.50 0.60 0 5 10 15 0.01 0 10 100 VF – FORWARD VOLTAGE (V) VBR (V) IF - FORWARD CURRENT (mA) Figure 1. I-V Curve Showing Typical Figure 2. 5082-2300 Series Typical Figure 3. 5082-2300 Series and 5082-2900 Temperature Variation for 5082-2300 Reverse Current vs. Reverse Voltage Typical Dynamic Resistance (RD) vs. Series and 5082-2900 Schottky Diodes. at Various Temperatures. Forward Current (IF). 1.2 50 100,000 150 125 1.0 10 10,000 5 100 0.8 75 1000 +150
°
C 1 0.6 0.5 50 +100
°
C 100 5082-2900 0.4 +50
°
C 25 5082-2303 +25
°
C - CAPACITANCE (pF) 0.1 T 0
°
C 10 0 C 0.2 0.05 - REVERSE CURRENT (nA) - FORWARD CURRENT (mA) –50
°
C I R I F TA =
°
C 0 0.01 1 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 V V R - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) R - REVERSE VOLTAGE (V) Figure 4. 5082-2300 and 5082-2900 Figure 5. I-V Curve Showing Typical Figure 6. (5082-2800 OR 1N5711) Typical Capacitance vs. Reverse Temperature Variation for 5082-2800 Typical Variation of Reverse Current Voltage. or 1N5711 Schottky Diodes. (IR) vs. Reverse Voltage (VR) at Various Temperatures. 12.0 100 10,000 150 125 1.5 10 1000 100 75 50 1.0 1.0 +150
°
C 100 +100
°
C 25 +50
°
C T - CAPACITANCE (pF) 0.5 0.1 10 A =
°
C TC +25
°
C - FORWARD CURRENT (mA) - REVERSE CURRENT (nA) I F 0
°
C I R –50
°
C 0 0.01 1.0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) VR - REVERSE VOLTAGE (V) Figure 7. (5082-2800 or 1N5711) Figure 8. I-V Curve Showing Typical Figure 9. (5082-2810 or IN5712) Typical Capacitance (CT) vs. Reverse Temperature Variation for the 5082- Typical Variation of Reverse Current Voltage (VR). 2810 or 1N5712 Schottky Diode. (IR) vs. Reverse Voltage (VR) at Various Temperatures.
Document Outline 1N5711 Features Description/Applications Maximum Ratings Outline 15 Package Characteristics Electrical Specifications Matched Pairs and Quads SPICE Parameters Typical Parameters Diode Package Marking
Typical Parameters 100 10.000 1000 100 )
Ω
10 1,000 75 50 100
°
C 1 100 100 50
°
C (nA) 25 25
°
C I R 0
°
C TA = 25
°
C 0.1 10 –50
°
C - FORWARD CURRENT (mA) - DYNAMIC RESISTANCE ( I F DR 0.01 1 10 0 0.10 0.20 0.30 0.40 0.50 0.60 0 5 10 15 0.01 0 10 100 VF – FORWARD VOLTAGE (V) VBR (V) IF - FORWARD CURRENT (mA) Figure 1. I-V Curve Showing Typical Figure 2. 5082-2300 Series Typical Figure 3. 5082-2300 Series and 5082-2900 Temperature Variation for 5082-2300 Reverse Current vs. Reverse Voltage Typical Dynamic Resistance (RD) vs. Series and 5082-2900 Schottky Diodes. at Various Temperatures. Forward Current (IF). 1.2 50 100,000 150 125 1.0 10 10,000 5 100 0.8 75 1000 +150
°
C 1 0.6 0.5 50 +100
°
C 100 5082-2900 0.4 +50
°
C 25 5082-2303 +25
°
C - CAPACITANCE (pF) 0.1 T 0
°
C 10 0 C 0.2 0.05 - REVERSE CURRENT (nA) - FORWARD CURRENT (mA) –50
°
C I R I F TA =
°
C 0 0.01 1 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 V V R - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) R - REVERSE VOLTAGE (V) Figure 4. 5082-2300 and 5082-2900 Figure 5. I-V Curve Showing Typical Figure 6. (5082-2800 OR 1N5711) Typical Capacitance vs. Reverse Temperature Variation for 5082-2800 Typical Variation of Reverse Current Voltage. or 1N5711 Schottky Diodes. (IR) vs. Reverse Voltage (VR) at Various Temperatures. 12.0 100 10,000 150 125 1.5 10 1000 100 75 50 1.0 1.0 +150
°
C 100 +100
°
C 25 +50
°
C T - CAPACITANCE (pF) 0.5 0.1 10 A =
°
C TC +25
°
C - FORWARD CURRENT (mA) - REVERSE CURRENT (nA) I F 0
°
C I R –50
°
C 0 0.01 1.0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) VR - REVERSE VOLTAGE (V) Figure 7. (5082-2800 or 1N5711) Figure 8. I-V Curve Showing Typical Figure 9. (5082-2810 or IN5712) Typical Capacitance (CT) vs. Reverse Temperature Variation for the 5082- Typical Variation of Reverse Current Voltage (VR). 2810 or 1N5712 Schottky Diode. (IR) vs. Reverse Voltage (VR) at Various Temperatures.
Document Outline 1N5711 Features Description/Applications Maximum Ratings Outline 15 Package Characteristics Electrical Specifications Matched Pairs and Quads SPICE Parameters Typical Parameters Diode Package Marking