Datasheet 2N7002 (Supertex) - 2

2N7002 Thermal Characteristics Package I I D D Power Dissipation
†
I (continuous)
†
(pulsed) @T = 25OC IDR DRM A
TO-236AB 115mA 800mA 0.36W 115mA 800mA
Notes:
† I (continuous) is limited by max rated T. D j
Electrical Characteristics
(T = 25°C unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-Source breakdown voltage 60 - - V V = 0V, I = 10µA DSS GS D V Gate threshold voltage 1.0 - 2.5 V V = V , I = 250µA GS(th) GS DS D ∆V Change in V with temperature - - -5.5 mV/OC V = V , I = 250µA GS(th) GS(th) GS DS D I Gate body leakage current - - ±100 nA V = ±20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max rating GS DS I Zero Gate voltage drain current µA DSS - - 500 V = 0V, V = 0.8Max rating, GS DS T = 125OC A I On-state Drain current 500 - - mA V = 10V, V = 25V D(ON) GS DS - - 7.5 V = 5.0V, I = 50mA R Static Drain-to-Source Ω GS D DS(ON) on-state resistance - - 7.5 V = 10V, I = 500mA GS D ∆R Change in R with temperature - - 1.0 %/OC V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 80 - - mmho V = 25V, I = 500mA FS DS D C Input capacitance - - 50 ISS V = 0V, GS C Common Source output capacitance - - 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 5.0 RSS t Turn-on time - - 20 (ON) ns V = 30V, I = 200mA, DD D R = 25Ω t Turn-off time - - 20 GEN (OFF) V Diode forward voltage drop - 1.2 - V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = 800mA rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 10V
90%
VDD INPUT Pulse
R 10%
Generator
L
0V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-2N7002
Supertex inc.
C062813 2
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