Datasheet LND250 (Microchip)

Supertex inc. LND250 N-Channel Depletion-Mode DMOS FET Features General Description
► Free from secondary breakdown The LND250 is a high voltage N-channel depletion mode ► Low power drive requirement (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. ► Ease of paralleling ► Excellent thermal stability The LND250 is ideal for high voltage applications in the ► Integral source-drain diode areas of normally-on switches, precision constant current ► High input impedance and low CISS sources, voltage ramp generation and amplification. ► ESD gate protection
Applications
► Solid state relays ► Normally-on switches ► Converters ► Power supply circuits ► Constant current sources ► Input protection circuits
Ordering Information Product Summary Part Number Package Options Packing BV /BV R I DSX DGX DS(ON) DSS (V) (max) (min)
LND250K1-G* TO-236AB (SOT-23) 3000/Reel 500 1.0kΩ 1.0mA -G denotes a lead (Pb)-free / RoHS compliant package * Part is not recommended for new designs. Please refer to LND150K1-G.
Absolute Maximum Ratings Pin Configuration Parameter Value
Drain-to-source BV
SOURCE
DSX Drain-to-gate BVDGX Gate-to-source ±20V
DRAIN
Operating and storage temperature -55OC to +150OC
GATE
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation
TO-236AB (SOT-23)
of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Product Marking NDEW
W = Code for Week Sealed = “Green” Packaging
TO-236AB (SOT-23)
Packages may or may not include the following marks: Si or Doc.# DSFP-LND250
Supertex inc.
B012314
www.supertex.com