Datasheet DN3535 (Microchip)
| Fabricante | Microchip |
| Descripción | N-Channel Depletion-Mode Vertical DMOS FETs Features |
| Páginas / Página | 5 / 1 — Supertex inc. DN3535. N-Channel Depletion-Mode Vertical DMOS FETs. … |
| Formato / tamaño de archivo | PDF / 395 Kb |
| Idioma del documento | Inglés |
Supertex inc. DN3535. N-Channel Depletion-Mode Vertical DMOS FETs. Features. General Description. Applications
Línea de modelo para esta hoja de datos
Versión de texto del documento
Supertex inc. DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description
► High input impedance This low threshold depletion-mode (normally-on) transistor ► Low input capacitance utilizes an advanced vertical DMOS structure and Supertex’s ► Fast switching speeds well-proven silicon-gate manufacturing process. This ► Low on-resistance combination produces a device with the power handling ► Free from secondary breakdown capabilities of bipolar transistors and with the high input ► Low input and output leakage impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced
Applications
secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Power supply circuits ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN3535N8-G TO-243AA (SOT-89) 2000/Reel
DSX DGX (max) (min)
-G denotes a lead (Pb)-free / RoHS compliant package. 350V 10Ω 200mA Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX Drain-to-gate voltage BV
SOURCE
DGX
DRAIN
Gate-to-source voltage ±20V
GATE
Operating and storage
TO-243AA (SOT-89)
temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device
Product Marking
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
DN5SW
W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or
Typical Thermal Resistance TO-243AA (SOT-89) Package θja
TO-243AA (SOT-89) 133OC/W
‡ Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3535
Supertex inc.
A062713
www.supertex.com
► High input impedance This low threshold depletion-mode (normally-on) transistor ► Low input capacitance utilizes an advanced vertical DMOS structure and Supertex’s ► Fast switching speeds well-proven silicon-gate manufacturing process. This ► Low on-resistance combination produces a device with the power handling ► Free from secondary breakdown capabilities of bipolar transistors and with the high input ► Low input and output leakage impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced
Applications
secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Power supply circuits ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN3535N8-G TO-243AA (SOT-89) 2000/Reel
DSX DGX (max) (min)
-G denotes a lead (Pb)-free / RoHS compliant package. 350V 10Ω 200mA Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX Drain-to-gate voltage BV
SOURCE
DGX
DRAIN
Gate-to-source voltage ±20V
GATE
Operating and storage
TO-243AA (SOT-89)
temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device
Product Marking
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
DN5SW
W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or
Typical Thermal Resistance TO-243AA (SOT-89) Package θja
TO-243AA (SOT-89) 133OC/W
‡ Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3535
Supertex inc.
A062713
www.supertex.com