Datasheet DN2540 (Microchip)

FabricanteMicrochip
DescripciónN-Channel Depletion-Mode Vertical DMOS FETs Features
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Supertex inc. DN2540. N-Channel Depletion-Mode. Vertical DMOS FETs. Features. General Description. Applications. Product Summary

Datasheet DN2540 Microchip

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Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description
► High input impedance The Supertex DN2540 is a low threshold depletion mode ► Low input capacitance (normally-on) transistor utilizing an advanced vertical ► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate ► Low on-resistance manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors ► Free from secondary breakdown and with the high input impedance and positive temperature ► Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and
Applications
thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input ► Linear amplifiers capacitance, and fast switching speeds are desired. ► Constant current sources ► Power supply circuits ► Telecom
Product Summary Ordering Information R I Part Number Package Option Packing BV /BV DS(ON) DSS DSX DGX (max) (min)
DN2540N3-G TO-92 1000/Bag 400V 25Ω 150mA DN2540N3-G P002 DN2540N3-G P003
Pin Configuration
DN2540N3-G P005 TO-92 2000/Reel
DRAIN
DN2540N3-G P013 DN2540N3-G P014
DRAIN
DN2540N5-G TO-220 50/Tube
SOURCE SOURCE
DN2540N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package.
GATE
Contact factory for Wafer / Die availablity.
GATE DRAIN
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
TO-92 TO-220 Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX
SOURCE DRAIN
Drain-to-gate voltage BVDGX
GATE
Gate-to-source voltage ±20V
TO-243AA (SOT-89)
Operating and storage
Typical Thermal Resistance
temperature -55OC to +150OC
Package θ
Absolute Maximum Ratings are those values beyond which damage to the device
ja
may occur. Functional operation under these conditions is not implied. Continuous TO-92 132OC/W operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-220 29OC/W TO-243AA (SOT-89) 133OC/W Doc.# DSFP-DN2540
Supertex inc.
B060313
www.supertex.com