Datasheet DN2450 (Microchip) - 3

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DN2450 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage.. BVDSX Drain-to-gate voltage..BVDGX Gate-to-source voltage... ±20V Operating and storage temperature... -55°C to +150°C Maximum junction temperature...150°C
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
1.1 ELECTRICAL SPECIFICATIONS TABLE 1-1: DC AND AC CHARACTERISTICS Electrical Specifications:
Unless otherwise specified, for all specifications TA =TJ = +25°C
Symbol Parameter Min Typ Max Units Conditions DC Parameters
(
Note 1 ,
unless otherwise stated) BVDSX Drain-to-source breakdown voltage 500 – – V VGS= -5.0V, ID= 100µA VGS(OFF) Gate-to-source off voltage -1.5 – -3.5 V VDS= 25V, ID= 10µA ∆VGS(OFF) Change in VGS(OFF) with temperature – – -4.5 mV/°C VDS= 25V, ID= 10µA (
Note 2
) IGSS Gate body leakage – – 100 nA VGS= ±20V, VDS= 0V – – 1.0 µA VDS= BVDSX, VGS= -10V ID(OFF) Drain-to-source leakage current V – – 1.0 mA DS= 0.8 BVDSX, VGS= -10V, TA= 125°C (
Note 2
) IDSS Saturated drain-to-source current 700 – – mA VGS= 0V, VDS= 25V Static drain-to-source on-state RDS(ON) – 7.0 10 Ω V resistance GS= 0V, ID= 300mA ∆RDS(ON) Change in RDS(ON) with temperature – – 1.1 %/°C VGS= 0V, ID= 300mA (
Note 2
)
AC Parameters
(
Note 2
) GFS Forward transconductance 500 – – mmho VDS= 10V, ID= 300mA CISS Input capacitance – 150 200 VGS= -10V, Common source output capaci- C – 40 55 pF V OSS DS= 25V, tance f = 1MHz CRSS Reverse transfer capacitance – 15 25 td(ON) Turn-on delay time – – 15 VDD= 25V, tr Rise time – – 20 ns ID= 300mA, td(OFF) Turn-off delay time – – 15 RGEN= 25Ω, tf Fall time – – 15
Diode Parameters
VSD Diode forward voltage drop – – 1.8 V VGS= -5.0V, ISD= 300mA (
Note 1 )
trr Reverse recovery time – 800 – ns VGS= -5.0V, ISD= 300mA (
Note 2
)
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested.  2015 Microchip Technology Inc. DS20005404A-page 3 Document Outline 1.0 Electrical Characteristics 1.1 ELECTRICAL SPECIFICATIONS TABLE 1-1: DC and AC Characteristics TABLE 1-2: Typical Thermal Resistance TABLE 1-3: Thermal characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Application Information FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Noblesville, IN Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Munich Germany - Pforzheim Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham