Datasheet MCP1501 (Microchip) - 4
| Fabricante | Microchip |
| Descripción | High-Precision Buffered Voltage Reference |
| Páginas / Página | 34 / 4 — MCP1501 |
| Revisión | 08-25-2017 |
| Formato / tamaño de archivo | PDF / 863 Kb |
| Idioma del documento | Inglés |
MCP1501
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- MCP1501-10E/SN MCP1501-12E/SN MCP1501-18E/SN MCP1501-20E/SN MCP1501-25E/SN MCP1501-30E/SN MCP1501-33E/SN MCP1501-40E/SN MCP1501T-10E/CHY MCP1501T-10E/RW MCP1501T-10E/SN MCP1501T-12E/CHY MCP1501T-12E/RW MCP1501T-12E/SN MCP1501T-18E/CHY MCP1501T-18E/RW MCP1501T-18E/SN MCP1501T-20E/CHY MCP1501T-20E/RW MCP1501T-20E/SN MCP1501T-25E/CHY MCP1501T-25E/RW MCP1501T-25E/SN MCP1501T-30E/CHY MCP1501T-30E/RW MCP1501T-30E/SN MCP1501T-33E/CHY MCP1501T-33E/RW MCP1501T-33E/SN MCP1501T-40E/CHY MCP1501T-40E/RW MCP1501T-40E/SN
Versión de texto del documento
MCP1501
TABLE 1-1: DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise specified, VDD(MIN) VDD 5.5V at –40C TA +125C.
Characteristic Sym. Shutdown VIL
VIH Output Voltage
Hysteresis Output Noise MCP1501-10 eN MCP1501-40 eN TABLE 1-2: ILOAD
IDD
MCP1501-10
MCP1501-20
MCP1501-40 Typ. Max. Units 1.35
3.80
300 µV ∆VOUT_HYST Maximum
Load Current
Supply
Current
Shutdown
Current Min. VIN = 5.5V —
—
—
—
— 14
27
20
110
±20 —
—
—
—
— µVRMS —
— 140
—
205
185
185 550
350 µA ISHDN Conditions µVRMS
mA nA Refer to Section 1.1.10
“Output Voltage
Hysteresis” for additional
details on testing conditions.
0.1 Hz to 10 Hz, TA = +25C
10 Hz to 10 kHz, TA = +25C
0.1 Hz to 10 Hz, TA = +25C
10 Hz to 10 kHz, TA = +25C
TA = +25°C
2.048V option
No Load
No Load, TA = +25°C
TA = +25°C TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all parameters apply at AVDD, DVDD = 2.7 to 3.6V.
Parameters Sym. Min. Typ. Max. Units Operating Temperature Range TA –40 — +125 °C Storage Temperature Range TA –65 — +150 °C Thermal Resistance for SOT-23-6 JA — +190.5 — °C/W Thermal Resistance for SOIC-8 JA — +149.5 — °C/W Thermal Resistance for DFN-8 JA — +141.3 — °C/W Conditions Temperature Ranges Thermal Package Resistance DS20005474E-page 4 2015-2017 Microchip Technology Inc.
TABLE 1-1: DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise specified, VDD(MIN) VDD 5.5V at –40C TA +125C.
Characteristic Sym. Shutdown VIL
VIH Output Voltage
Hysteresis Output Noise MCP1501-10 eN MCP1501-40 eN TABLE 1-2: ILOAD
IDD
MCP1501-10
MCP1501-20
MCP1501-40 Typ. Max. Units 1.35
3.80
300 µV ∆VOUT_HYST Maximum
Load Current
Supply
Current
Shutdown
Current Min. VIN = 5.5V —
—
—
—
— 14
27
20
110
±20 —
—
—
—
— µVRMS —
— 140
—
205
185
185 550
350 µA ISHDN Conditions µVRMS
mA nA Refer to Section 1.1.10
“Output Voltage
Hysteresis” for additional
details on testing conditions.
0.1 Hz to 10 Hz, TA = +25C
10 Hz to 10 kHz, TA = +25C
0.1 Hz to 10 Hz, TA = +25C
10 Hz to 10 kHz, TA = +25C
TA = +25°C
2.048V option
No Load
No Load, TA = +25°C
TA = +25°C TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all parameters apply at AVDD, DVDD = 2.7 to 3.6V.
Parameters Sym. Min. Typ. Max. Units Operating Temperature Range TA –40 — +125 °C Storage Temperature Range TA –65 — +150 °C Thermal Resistance for SOT-23-6 JA — +190.5 — °C/W Thermal Resistance for SOIC-8 JA — +149.5 — °C/W Thermal Resistance for DFN-8 JA — +141.3 — °C/W Conditions Temperature Ranges Thermal Package Resistance DS20005474E-page 4 2015-2017 Microchip Technology Inc.