Datasheet AMP01 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | Low Noise, Precision Instrumentation Amplifier |
| Páginas / Página | 30 / 4 — Data Sheet. AMP01. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. … |
| Revisión | E |
| Formato / tamaño de archivo | PDF / 527 Kb |
| Idioma del documento | Inglés |
Data Sheet. AMP01. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. AMP01A. AMP01B. Parameter. mbol st Conditions/Comments
Versión de texto del documento
link to page 5 link to page 5
Data Sheet AMP01 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = ±15 V, RS = 10 kΩ, RL = 2 kΩ, TA = 25°C, unless otherwise noted.
Table 1. AMP01A AMP01B Parameter Sy Te mbol st Conditions/Comments Min Typ Max Min Typ Max Unit
OFFSET VOLTAGE Input Offset Voltage VIOS TA = 25°C 20 50 40 100 μV −55°C ≤ TA ≤ +125°C 40 80 60 150 μV Input Offset Voltage Drift TCVIOS −55°C ≤ TA ≤ +125°C 0.15 0.3 0.3 1.0 μV°C Output Offset Voltage VOOS TA = 25°C 1 3 2 6 mV −55°C ≤ TA ≤ +125°C 3 6 6 10 mV Output Offset Voltage Drift TCVOOS RG = ∞ −55°C ≤ TA ≤ +125°C 20 50 50 120 μV/°C Offset Referred to Input vs. PSR V+ = +5 V to +15 V Positive Supply G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB −55°C ≤ TA ≤ +125°C G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB Offset Referred to Input vs. PSR V− = −5 V to −15 V Negative Supply G = 1000 105 125 105 115 dB G = 100 90 105 90 95 dB G = 10 70 85 70 75 dB G = 1 50 65 50 60 dB −55°C ≤ TA ≤ +125°C G = 1000 105 125 105 115 dB G = 100 90 105 90 95 dB G = 10 70 85 70 75 dB G = 1 50 85 50 60 dB Input Offset Voltage Trim Range VS = ±4.5 V to ±18 V1 ±6 ±6 mV Output Offset Voltage Trim Range VS = ±4.5 V to ±18 V1 ±100 ±100 mV INPUT CURRENT Input Bias Current IB TA = 25°C 1 4 2 6 nA −55°C ≤ TA ≤ +125°C 4 10 6 15 nA Input Bias Current Drift TCIB −55°C ≤ TA ≤ +125°C 40 50 pA/°C Input Offset Current IOS TA = 25°C 0.2 1.0 0.5 2.0 nA −55°C ≤ TA ≤ +125°C 0.5 3.0 1.0 6.0 nA Input Offset Current Drift TCIOS −55°C ≤ TA ≤ +125°C 3 5 pA/°C Rev. E | Page 3 of 29 Document Outline FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS DICE CHARACTERISTICS WAFER TEST LIMITS (AMP01NBC) ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT AND OUTPUT OFFSET VOLTAGES INPUT BIAS AND OFFSET CURRENTS GAIN COMMON-MODE REJECTION ACTIVE GUARD DRIVE GROUNDING SENSE AND REFERENCE TERMINALS DRIVING 50 Ω LOADS HEATSINKING OVERVOLTAGE PROTECTION POWER SUPPLY CONSIDERATIONS APPLICATIONS CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet AMP01 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = ±15 V, RS = 10 kΩ, RL = 2 kΩ, TA = 25°C, unless otherwise noted.
Table 1. AMP01A AMP01B Parameter Sy Te mbol st Conditions/Comments Min Typ Max Min Typ Max Unit
OFFSET VOLTAGE Input Offset Voltage VIOS TA = 25°C 20 50 40 100 μV −55°C ≤ TA ≤ +125°C 40 80 60 150 μV Input Offset Voltage Drift TCVIOS −55°C ≤ TA ≤ +125°C 0.15 0.3 0.3 1.0 μV°C Output Offset Voltage VOOS TA = 25°C 1 3 2 6 mV −55°C ≤ TA ≤ +125°C 3 6 6 10 mV Output Offset Voltage Drift TCVOOS RG = ∞ −55°C ≤ TA ≤ +125°C 20 50 50 120 μV/°C Offset Referred to Input vs. PSR V+ = +5 V to +15 V Positive Supply G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB −55°C ≤ TA ≤ +125°C G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB Offset Referred to Input vs. PSR V− = −5 V to −15 V Negative Supply G = 1000 105 125 105 115 dB G = 100 90 105 90 95 dB G = 10 70 85 70 75 dB G = 1 50 65 50 60 dB −55°C ≤ TA ≤ +125°C G = 1000 105 125 105 115 dB G = 100 90 105 90 95 dB G = 10 70 85 70 75 dB G = 1 50 85 50 60 dB Input Offset Voltage Trim Range VS = ±4.5 V to ±18 V1 ±6 ±6 mV Output Offset Voltage Trim Range VS = ±4.5 V to ±18 V1 ±100 ±100 mV INPUT CURRENT Input Bias Current IB TA = 25°C 1 4 2 6 nA −55°C ≤ TA ≤ +125°C 4 10 6 15 nA Input Bias Current Drift TCIB −55°C ≤ TA ≤ +125°C 40 50 pA/°C Input Offset Current IOS TA = 25°C 0.2 1.0 0.5 2.0 nA −55°C ≤ TA ≤ +125°C 0.5 3.0 1.0 6.0 nA Input Offset Current Drift TCIOS −55°C ≤ TA ≤ +125°C 3 5 pA/°C Rev. E | Page 3 of 29 Document Outline FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS DICE CHARACTERISTICS WAFER TEST LIMITS (AMP01NBC) ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT AND OUTPUT OFFSET VOLTAGES INPUT BIAS AND OFFSET CURRENTS GAIN COMMON-MODE REJECTION ACTIVE GUARD DRIVE GROUNDING SENSE AND REFERENCE TERMINALS DRIVING 50 Ω LOADS HEATSINKING OVERVOLTAGE PROTECTION POWER SUPPLY CONSIDERATIONS APPLICATIONS CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE