Datasheet AD7895 (Analog Devices) - 4

FabricanteAnalog Devices
DescripciónTrue Bipolar Input, 5 V Single Supply, 12-Bit, Serial 3.8 µs ADC in 8-Pin Package
Páginas / Página13 / 4 — AD7895. TIMING CHARACTERISTICS1, 2 (VDD = +5 V, GND = 0 V, REF IN = +2.5 …
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AD7895. TIMING CHARACTERISTICS1, 2 (VDD = +5 V, GND = 0 V, REF IN = +2.5 V). Parameter. A, B Versions. Units

AD7895 TIMING CHARACTERISTICS1, 2 (VDD = +5 V, GND = 0 V, REF IN = +2.5 V) Parameter A, B Versions Units

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AD7895 TIMING CHARACTERISTICS1, 2 (VDD = +5 V, GND = 0 V, REF IN = +2.5 V) Parameter A, B Versions Units Test Conditions/Comments
t1 40 ns min CONVST Pulse Width t2 352 ns min SCLK High Pulse Width t3 352 ns min SCLK Low Pulse Width t4 603 ns max Data Access Time after Falling Edge of SCLK, VDD = 5 V ± 5% t5 10 ns min Data Hold Time after Falling Edge of SCLK t6 504 ns max Bus Relinquish Time after Falling Edge of SCLK NOTES 1 Sample tested at +25°C to ensure compliance. All input signals are measured with tr = tf = 1 ns (10% to 90% of +5 V) and timed from a voltage level of +1.4 V. 2The SCLK maximum frequency is 15 MHz. Care must be taken when interfacing to account for the data access time, t 4, and the setup time required for the user's processor. These two times will determine the maximum SCLK frequency that the user’s system can operate with. See “Serial Interface” section for more information. 3 Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.0 V. 4 Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t 6, quoted in the timing characteristics is the true bus relinquish time of the part and, as such, is independent of external bus loading capacitances.
ABSOLUTE MAXIMUM RATINGS*
*Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional (TA = +25°C unless otherwise noted) operation of the device at these or any other conditions above those listed in the VDD to GND . –0.3 V to +7 V operational sections of this specification is not implied. Exposure to absolute Analog Input Voltage to GND maximum rating conditions for extended periods may affect device reliability. AD7895-10 . ± 17 V AD7895-2, AD7895-3 . –5 V, +10 V Reference Input Voltage to GND . –0.3 V to VDD + 0.3 V
2.0mA
Digital Input Voltage to GND . –0.3 V to VDD + 0.3 V Digital Output Voltage to GND . –0.3 V to VDD + 0.3 V
TO
Operating Temperature Range
OUTPUT +1.6V PIN
Commercial (A, B Versions) . –40°C to +85°C
50pF
Storage Temperature Range . –65°C to +150°C
2.0mA
Junction Temperature . +150°C Plastic DIP Package, Power Dissipation . 450 mW θJA Thermal Impedance . 130°C/W Figure 1. Load Circuit for Access Time and Bus Lead Temperature (Soldering, 10 sec) . +260°C Relinquish Time SOIC Package, Power Dissipation . 450 mW θJA Thermal Impedance . 170°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . +215°C Infrared (15 sec) . +220°C
ORDERING GUIDE Model Temperature Range Linearity Error (LSB) SNR (dB) Package Option*
AD7895AN-2 –40°C to +85°C ±1 LSB 70 dB N-8 AD7895AR-2 –40°C to +85°C ±1 LSB 70 dB SO-8 AD7895BR-2 –40°C to +85°C ±1 LSB 70 dB SO-8 AD7895AN-10 –40°C to +85°C ±1 LSB 70 dB N-8 AD7895AR-10 –40°C to +85°C ±1 LSB 70 dB SO-8 AD7895BR-10 –40°C to +85°C ±1 LSB 70 dB SO-8 AD7895AN-3 –40°C to +125°C ±1 LSB 70 dB N-8 AD7895AR-3 –40°C to +85°C ±1 LSB 70 dB SO-8 *N = Plastic DIP, SO = SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the AD7895 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality. REV. 0 –3–