Datasheet IRF520, SiHF520 (Vishay) - 5

FabricanteVishay
DescripciónPower MOSFET
Páginas / Página9 / 5 — IRF520, SiHF520. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum …
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IRF520, SiHF520. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF520, SiHF520 Fig 10a - Switching Time Test Circuit Fig 9 - Maximum Drain Current vs Case Temperature

Versión de texto del documento

IRF520, SiHF520
Vishay Siliconix RD VDS 10 VGS D.U.T. RG 8 + - VDD 10 V 6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ain Current (A) 4
Fig. 10a - Switching Time Test Circuit
, Dr I D 2 VDS 0 90 % 25 50 75 100 125 150 175 91017_09 TC, Case Temperature (°C) 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
10 ) thJC 0 - 0.5 1 0.2 P 0.1 DM 0.05 0.1 t1 mal Response (Z 0.02 Single Pulse t 0.01 2 (Thermal Response) Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91017_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000