Datasheet LTC2372-16 (Analog Devices) - 6

FabricanteAnalog Devices
Descripción16-Bit, 500ksps, 8-Channel SAR ADC with 96dB SNR
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eFerence buFFer characTerisTics The. denotes the specifications which apply over the full

eFerence buFFer characTerisTics The denotes the specifications which apply over the full

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LTC2372-16
r eFerence buFFer characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VREFBUF Reference Buffer Output Voltage VREFIN = 2.048V l 4.088 4.096 4.104 V REFBUF Input Voltage Range (REFBUF Overdriven) (Notes 5, 9) l 2.5 5 V REFBUF Output Impedance VREFIN = 0V (Buffer Disabled) 13 kΩ IREFBUF REFBUF Load Current VREFBUF = 5V (REFBUF Overdriven) (Notes 9, 12) l 0.7 1 mA VREFBUF = 5V, Nap Mode (REFBUF Overdriven) (Note 9) 0.38 mA
Digi Tal inpuTs anD DigiTal ouTpuTs The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage l 0.8 • OVDD V VIL Low Level Input Voltage l 0.2 • OVDD V IIN Digital Input Current VIN = 0V to OVDD l –10 10 μA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage IO = –500µA l OVDD – 0.2 V VOL Low Level Output Voltage IO = 500µA l 0.2 V IOZ Hi-Z Output Leakage Current VOUT = 0V to OVDD l –10 10 µA ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = OVDD 10 mA
p ower requireMenTs The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Supply Voltage l 4.75 5 5.25 V OVDD Supply Voltage l 1.71 5.25 V IVDD Supply Current 500ksps Sample Rate l 5.4 7 mA IOVDD Supply Current 500ksps Sample Rate (CL = 20pF) l 0.35 mA INAP Nap Mode Current Conversion Done (IVDD + IOVDD) l 1.25 1.5 mA ISLEEP Sleep Mode Current Sleep Mode (IVDD + IOVDD) l 60 120 μA PD Power Dissipation 500ksps Sample Rate 27 35 mW Nap Mode Conversion Done (IVDD + IOVDD) 6.25 7.5 mW Sleep Mode Sleep Mode (IVDD + IOVDD) 300 600 µW
a Dc TiMing characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fSMPL Maximum Sampling Frequency l 500 ksps tCONV Conversion Time l 1 1.5 µs tACQ Acquisition Time tACQ = tCYC – tHOLD (Note 6) l 1.46 µs tHOLD Maximum Time Between Acquisitions l 540 ns tCYC Time Between Conversions l 2 µs tCNVH CNV High Time l 20 ns tCNVL Minimum Low Time for CNV (Note 13) l 20 ns tBUSYLH CNV↑ to BUSY↑ Delay CL = 20pF l 13 ns tRESETH RESET Pulse Width l 200 ns 237216f 6 For more information www.linear.com/LTC2372-16 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Pin Configuration Electrical Characteristics Converter Characteristics Dynamic Accuracy Internal Reference Characteristics Reference Buffer Characteristics Digital Inputs and Digital Outputs Power Requirements ADC Timing Characteristics Electrical Characteristics Typical Performance Characteristics Pin Functions Functional Block Diagram Timing Diagram Applications Information Timing Diagrams Board Layout Schematics Package Description Typical Application Related Parts