Datasheet LTC2369-18 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | 18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
| Páginas / Página | 24 / 4 — REFERENCE INPUT. The. denotes the specifications which apply over the … |
| Formato / tamaño de archivo | PDF / 914 Kb |
| Idioma del documento | Inglés |
REFERENCE INPUT. The. denotes the specifications which apply over the full operating temperature range, otherwise
Línea de modelo para esta hoja de datos
- LTC2369CDE-18#PBF LTC2369CDE-18#PBF LTC2369CDE-18#TRPBF LTC2369CDE-18#TRPBF LTC2369CMS-18#PBF LTC2369CMS-18#PBF LTC2369CMS-18#TRPBF LTC2369CMS-18#TRPBF LTC2369HMS-18#PBF LTC2369HMS-18#PBF LTC2369HMS-18#TRPBF LTC2369HMS-18#TRPBF LTC2369IDE-18#PBF LTC2369IDE-18#PBF LTC2369IDE-18#TRPBF LTC2369IDE-18#TRPBF LTC2369IMS-18#PBF LTC2369IMS-18#PBF LTC2369IMS-18#TRPBF LTC2369IMS-18#TRPBF
Versión de texto del documento
LTC2369-18
REFERENCE INPUT The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Reference Voltage (Note 5) l 2.5 5.1 V IREF Reference Input Current (Note 9) l 0.85 1.1 mA
DIGITAL INPUTS AND DIGITAL OUTPUTS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage l 0.8 • OVDD V VIL Low Level Input Voltage l 0.2 • OVDD V IIN Digital Input Current VIN = 0V to OVDD l –10 10 μA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage IO = –500μA l OVDD – 0.2 V VOL Low Level Output Voltage IO = 500μA l 0.2 V IOZ Hi-Z Output Leakage Current VOUT = 0V to OVDD l –10 10 μA ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = OVDD 10 mA
POWER REQUIREMENTS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Supply Voltage l 2.375 2.5 2.625 V OVDD Supply Voltage l 1.71 5.25 V IVDD Supply Current 1.6Msps Sample Rate l 7.2 8.6 mA IOVDD Supply Current 1.6Msps Sample Rate (CL = 20pF) 0.7 mA IPD Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V) l 0.9 90 μA IPD Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V, H-Grade) l 0.9 140 μA PD Power Dissipation 1.6Msps Sample Rate 18 21.5 mW Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V) 2.25 225 μW Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V, H-Grade) 2.25 315 μW
ADC TIMING CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fSMPL Maximum Sampling Frequency l 1.6 Msps tCONV Conversion Time l 360 412 ns tACQ Acquisition Time tACQ = tCYC – tCONV – tBUSYLH (Note 10) l 200 ns tCYC Time Between Conversions l 625 ns tCNVH CNV High Time l 20 ns tBUSYLH CNV↑ to BUSY Delay CL = 20pF l 13 ns tCNVL Minimum Low Time for CNV (Note 11) l 20 ns tQUIET SCK Quiet Time from CNV↑ (Note 10) l 20 ns tSCK SCK Period (Notes 11, 12) l 10 ns tSCKH SCK High Time l 4 ns 236918fa 4
REFERENCE INPUT The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Reference Voltage (Note 5) l 2.5 5.1 V IREF Reference Input Current (Note 9) l 0.85 1.1 mA
DIGITAL INPUTS AND DIGITAL OUTPUTS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage l 0.8 • OVDD V VIL Low Level Input Voltage l 0.2 • OVDD V IIN Digital Input Current VIN = 0V to OVDD l –10 10 μA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage IO = –500μA l OVDD – 0.2 V VOL Low Level Output Voltage IO = 500μA l 0.2 V IOZ Hi-Z Output Leakage Current VOUT = 0V to OVDD l –10 10 μA ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = OVDD 10 mA
POWER REQUIREMENTS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Supply Voltage l 2.375 2.5 2.625 V OVDD Supply Voltage l 1.71 5.25 V IVDD Supply Current 1.6Msps Sample Rate l 7.2 8.6 mA IOVDD Supply Current 1.6Msps Sample Rate (CL = 20pF) 0.7 mA IPD Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V) l 0.9 90 μA IPD Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V, H-Grade) l 0.9 140 μA PD Power Dissipation 1.6Msps Sample Rate 18 21.5 mW Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V) 2.25 225 μW Power Down Mode Conversion Done (IVDD + IOVDD + IREF, VREF > 2V, H-Grade) 2.25 315 μW
ADC TIMING CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fSMPL Maximum Sampling Frequency l 1.6 Msps tCONV Conversion Time l 360 412 ns tACQ Acquisition Time tACQ = tCYC – tCONV – tBUSYLH (Note 10) l 200 ns tCYC Time Between Conversions l 625 ns tCNVH CNV High Time l 20 ns tBUSYLH CNV↑ to BUSY Delay CL = 20pF l 13 ns tCNVL Minimum Low Time for CNV (Note 11) l 20 ns tQUIET SCK Quiet Time from CNV↑ (Note 10) l 20 ns tSCK SCK Period (Notes 11, 12) l 10 ns tSCKH SCK High Time l 4 ns 236918fa 4