Datasheet LTC1419 (Analog Devices) - 4

FabricanteAnalog Devices
Descripción14-Bit, 800ksps Sampling A/D Converter with Shutdown
Páginas / Página20 / 4 — POWER REQUIRE E TS The. denotes specifications which apply over the full …
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POWER REQUIRE E TS The. denotes specifications which apply over the full operating temperature range,

POWER REQUIRE E TS The denotes specifications which apply over the full operating temperature range,

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LTC1419
W U POWER REQUIRE E TS The

denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
PDIS Power Dissipation ● 150 240 mW Nap Mode SHDN = 0V, CS = 0V 7.5 12 mW Sleep Mode SHDN = 0V, CS = 5V 1.2 mW
W U TI I G CHARACTERISTICS The

denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fSAMPLE(MAX) Maximum Sampling Frequency ● 800 kHz tCONV Conversion Time ● 950 1150 ns tACQ Acquisition Time ● 90 300 ns tACQ + CONV Acquisition + Conversion Time ● 1040 1250 ns t1 CS to RD Setup Time (Notes 9, 10) ● 0 ns t2 CS↓ to CONVST↓ Setup Time (Notes 9, 10) ● 40 ns t3 CS↓ to SHDN↓ Setup Time (Notes 9, 10) 40 ns t4 SHDN↑ to CONVST↓ Wake-Up Time (Note 10) 400 ns t5 CONVST Low Time (Notes 10, 11) ● 40 ns t6 CONVST to BUSY Delay CL = 25pF 20 ns ● 50 ns t7 Data Ready Before BUSY↑ 20 50 ns ● 15 ns t8 Delay Between Conversions (Note 10) ● 40 ns t9 Wait Time RD↓ After BUSY↑ (Note 9) ● – 5 ns t10 Data Access Time After RD↓ CL = 25pF 15 25 ns ● 35 ns CL = 100pF 20 35 ns ● 50 ns t11 Bus Relinquish Time 10 20 ns 0°C ≤ TA ≤ 70°C ● 25 ns – 40°C ≤ TA ≤ 85°C ● 30 ns t12 RD Low Time ● t10 ns t13 CONVST High Time ● 40 ns
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 6:
Linearity, offset and full-scale specifications apply for a single- may cause permanent damage to the device. Exposure to any Absolute ended +AIN input with – AIN grounded. Maximum Rating condition for extended periods may affect device
Note 7:
Integral nonlinearity is defined as the deviation of a code from a reliabilty and lifetime. straight line passing through the actual endpoints of the transfer curve.
Note 2:
All voltage values are with respect to ground with DGND and The deviation is measured from the center of the quantization band. AGND wired together unless otherwise noted.
Note 8:
Bipolar offset is the offset voltage measured from – 0.5LSB
Note 3:
When these pin voltages are taken below V when the output code flickers between 0000 0000 0000 00 and SS or above VDD, they will be clamped by internal diodes. This product can handle input currents 1111 1111 1111 11. greater than 100mA below VSS or above VDD without latchup.
Note 9:
Guaranteed by design, not subject to test.
Note 4:
When these pin voltages are taken below VSS, they will be clamped
Note 10:
Recommended operating conditions. by internal diodes. This product can handle input currents greater than
Note 11:
The falling edge of CONVST starts a conversion. If CONVST 100mA below VSS without latchup. These pins are not clamped returns high at a critical point during the conversion it can create small to VDD. errors. For best performance ensure that CONVST returns high either
Note 5:
VDD = 5V, VSS = – 5V, fSAMPLE = 800kHz, tr = tf = 5ns unless within 650ns after the start of the conversion or after BUSY rises. otherwise specified. 1419fb 4