Datasheet AD8551, AD8552, AD8554 (Analog Devices) - 4

FabricanteAnalog Devices
DescripciónSheet Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers
Páginas / Página24 / 4 — AD8551/AD8552/AD8554. Data Sheet. Table 2. Parameter. Symbol. Conditions. …
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AD8551/AD8552/AD8554. Data Sheet. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

AD8551/AD8552/AD8554 Data Sheet Table 2 Parameter Symbol Conditions Min Typ Max Unit

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AD8551/AD8552/AD8554 Data Sheet
VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −40°C ≤ TA ≤ +125°C 10 μV Input Bias Current IB 10 50 pA AD8551/AD8554 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA AD8552 −40°C ≤ TA ≤ +85°C 160 300 pA AD8552 −40°C ≤ TA ≤ +125°C 2.5 4 nA Input Offset Current IOS 10 50 pA AD8551/AD8554 −40°C ≤ TA ≤ +125°C 150 200 pA AD8552 −40°C ≤ TA ≤ +85°C 30 150 pA AD8552 −40°C ≤ TA ≤ +125°C 150 400 pA Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 115 130 dB −40°C ≤ TA ≤ +125°C 110 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 2.4 V 110 140 dB −40°C ≤ TA ≤ +125°C 105 130 dB Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 2.685 2.697 V RL = 100 kΩ to GND @ −40°C to +125°C 2.685 2.696 V RL = 10 kΩ to GND 2.67 2.68 V RL = 10 kΩ to GND @ −40°C to +125°C 2.67 2.675 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ @ −40°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 20 mV RL = 10 kΩ to V+ @ −40°C to +125°C 15 20 mV Short-Circuit Limit ISC ±10 ±15 mA −40°C to +125°C ±10 mA Output Current IO ±10 mA −40°C to +125°C ±5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −40°C ≤ TA ≤ +125°C 115 130 dB Supply Current/Amplifier ISY VO = 0 V 750 900 μA −40°C ≤ TA ≤ +125°C 950 1000 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.5 V/μs Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 1.6 μV p-p Voltage Noise Density en f = 1 kHz 75 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. F | Page 4 of 24 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS FUNCTIONAL DESCRIPTION AMPLIFIER ARCHITECTURE BASIC AUTO-ZERO AMPLIFIER THEORY Auto-Zero Phase Amplification Phase HIGH GAIN, CMRR, PSRR MAXIMIZING PERFORMANCE THROUGHPROPER LAYOUT 1/f NOISE CHARACTERISTICS INTERMODULATION DISTORTION BROADBAND AND EXTERNAL RESISTOR NOISE CONSIDERATIONS OUTPUT OVERDRIVE RECOVERY INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL CAPACITIVE LOAD DRIVE POWER-UP BEHAVIOR APPLICATIONS INFORMATION A 5 V PRECISION STRAIN GAGE CIRCUIT 3 V INSTRUMENTATION AMPLIFIER A HIGH ACCURACY THERMOCOUPLE AMPLIFIER PRECISION CURRENT METER PRECISION VOLTAGE COMPARATOR OUTLINE DIMENSIONS ORDERING GUIDE