Datasheet AD8571, AD8572, AD8574 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónZero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers
Páginas / Página28 / 5 — Data Sheet. AD8571/AD8572/AD8574. 2.7 V ELECTRICAL CHARACTERISTICS. Table …
RevisiónF
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Idioma del documentoInglés

Data Sheet. AD8571/AD8572/AD8574. 2.7 V ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

Data Sheet AD8571/AD8572/AD8574 2.7 V ELECTRICAL CHARACTERISTICS Table 2 Parameter Symbol Conditions Min Typ Max Unit

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Data Sheet AD8571/AD8572/AD8574 2.7 V ELECTRICAL CHARACTERISTICS
VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −40°C ≤ TA ≤ +125°C 10 μV Input Bias Current IB 10 50 pA AD8571/AD8574 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA AD8572 −40°C ≤ TA ≤ +85°C 160 300 pA −40°C ≤ TA ≤ +125°C 2.5 4 nA Input Offset Current IOS 10 50 pA AD8571/AD8574 −40°C ≤ TA ≤ +125°C 150 200 pA AD8572 −40°C ≤ TA ≤ +85°C 30 150 pA −40°C ≤ TA ≤ +125°C 150 400 pA Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 115 130 dB −40°C ≤ TA ≤ +125°C 110 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 2.4 V 110 140 dB −40°C ≤ TA ≤ +125°C 105 130 dB Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 0.005 0.04 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 2.685 2.697 V RL = 100 kΩ to GND @ −40°C to +125°C 2.685 2.696 V RL = 10 kΩ to GND 2.67 2.68 V RL = 10 kΩ to GND @ −40°C to +125°C 2.67 2.675 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ @ −40°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 20 mV RL = 10 kΩ to V+ @ −40°C to +125°C 15 20 mV Short-Circuit Limit ISC ±10 ±15 mA −40°C to +125°C ±10 mA Output Current IO ±10 mA −40°C to +125°C ±5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −40°C ≤ TA ≤ +125°C 115 130 dB Supply Current per Amplifier ISY VO = 0 V 750 900 μA −40°C ≤ TA ≤ +125°C 950 1000 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.5 V/μs Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 2.0 μV p-p Voltage Noise Density en f = 1 kHz 94 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. F | Page 5 of 28 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS 2.7 V ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS FUNCTIONAL DESCRIPTION AMPLIFIER ARCHITECTURE BASIC AUTO-ZERO AMPLIFIER THEORY AUTO-ZERO PHASE AMPLIFICATION PHASE HIGH GAIN, CMRR, AND PSRR MAXIMIZING PERFORMANCE THROUGH PROPER LAYOUT 1/f NOISE CHARACTERISTICS RANDOM AUTO-ZERO CORRECTION ELIMINATES INTERMODULATION DISTORTION BROADBAND AND EXTERNAL RESISTOR NOISE CONSIDERATIONS OUTPUT OVERDRIVE RECOVERY INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL CAPACITIVE LOAD DRIVE POWER-UP BEHAVIOR APPLICATIONS INFORMATION 5 V PRECISION STRAIN GAGE CIRCUIT 3 V INSTRUMENTATION AMPLIFIER HIGH ACCURACY THERMOCOUPLE AMPLIFIER PRECISION CURRENT METER PRECISION VOLTAGE COMPARATOR OUTLINE DIMENSIONS ORDERING GUIDE