AD8018ParameterConditionsMinTypMaxUnit LOGIC INPUTS (PWDN1, 0) Logic “1” Voltage 2.0 V Logic “0” Voltage 0.8 V Logic Input Bias Current 240 A Standby Recovery Time RL = 10 Ω, G = +2, IS = 90% of Typical 500 ns Specifications subject to change without notice. ABSOLUTE MAXIMUM RATINGS1MAXIMUM POWER DISSIPATION Supply Voltage . 8 V The maximum power that can be safely dissipated by the AD8018 Internal Power Dissipation2 is limited by the associated rise in junction temperature. The Small Outline Package (R) . 650 mW maximum safe junction temperature for plastic encapsulated TSSOP Package (RU) . 565 mW devices is determined by the glass transition temperature of the Input Voltage (Common-Mode) . ± VS plastic, approximately 150°C. Temporarily exceeding this limit Logic Voltage, PWDN0, 1 . ± VS may cause a shift in parametric performance due to a change Differential Input Voltage . ± 1.6 V in the stresses exerted on the die by the package. Exceeding a Output Short Circuit Duration junction temperature of 175°C for an extended period can result . Observe Power Derating Curves in device failure. Storage Temperature Range RU, R . –65°C to +150°C While the AD8018 is internally short circuit protected, this may Operating Temperature Range . –40°C to +85°C not be sufficient to guarantee that the maximum junction tempera- Lead Temperature Range (Soldering 10 sec) . 300°C ture (150°C) is not exceeded under all conditions. To ensure NOTES proper operation, it is necessary to observe the maximum power 1Stresses above those listed under Absolute Maximum Ratings may cause perma- derating curves. nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 2.0 Specification is for the device on a 4-layer board in free air at 85 °C: TJ = 150 ⴗ C 8-Lead SOIC Package: θJA = 100°C/W. 14-Lead TSSOP Package: θJA = 115°C/W. Watts – 1.58-LEAD SOIC PACKAGEORDERING GUIDETemperaturePackagePackage1.0ModelRangeDescriptionOption14-LEAD TSSOP PACKAGE AD8018AR –40°C to +85°C 8-Lead Plastic SO-8 0.5 SOIC AD8018AR–REEL –40°C to +85°C 8-Lead SOIC SO-8 MAXIMUM POWER DISSIPATION AD8018AR–REEL7 –40°C to +85°C 8-Lead SOIC SO-8 AD8018ARU –40°C to +85°C 14-Lead Plastic RU-14 0–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 TSSOP AMBIENT TEMPERATURE – ⴗ C AD8018ARU–REEL –40°C to +85°C 14-Lead Plastic RU-14 Figure 3. Plot of Maximum Power Dissipation vs. TSSOP Temperature AD8018ARU–REEL7 –40°C to +85°C 14-Lead Plastic RU-14 TSSOP AD8018ARU–EVAL Evaluation Board RU-14 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily WARNING! accumulate on the human body and test equipment and can discharge without detection. Although the AD8018 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are ESD SENSITIVE DEVICE recommended to avoid performance degradation or loss of functionality. REV. A –3–