Datasheet OP777, OP727, OP747 (Analog Devices) - 2

OP777/OP727/OP747–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage OP777 VOS +25 C < T A < +85 C 20 100 μV –40°C < T A < +85 °C 50 200 μV Offset Voltage OP727/OP747 +25 C < T A < +85 C 30 160 μV –40°C < T A < +85 °C 60 300 μV Input Bias Current IB –40°C < T A < +85 °C 5.5 11 nA Input Offset Current IOS –40°C < T A < +85 °C 0.1 2 nA Input Voltage Range 0 4 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4 V 104 110 dB Large Signal Voltage Gain AVO RL = 10 k Ω , VO = 0.5 V to 4.5 V 300 500 V/mV Offset Voltage Drift OP777 ΔVOS/ΔT –40°C < T A < +85 °C 0.3 1.3 μV/°C Offset Voltage Drift OP727/OP747 ΔVOS/ΔT –40°C < T A < +85 °C 0.4 1.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA, –40 °C to +85 °C 4.88 4.91 V Output Voltage Low VOL IL = 1 mA, –40 °C to +85 °C 126 140 mV Output Circuit IOUT VDROPOUT < 1 V ±10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 3 V to 30 V 120 130 dB Supply Current/Amplifier OP777 ISY VO = 0 V 220 270 μA –40°C < T A < +85 °C 270 320 μA Supply Current/Amplifier OP727/OP747 VO = 0 V 235 290 μA –40°C < T A < +85 °C 290 350 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 k Ω 0.2 V/μs Gain Bandwidth Product GBP 0.7 MHz NOISE PERFORMANCE Voltage Noise enp-p 0.1 Hz to 10 Hz 0.4 μV p-p Voltage Noise Density en f = 1 kHz 15 nV/√Hz Current Noise Density in f = 1 kHz 0.13 pA/√Hz NOTES Typical specifications: >50% of units perform equal to or better than the “typical” value. Specifications subject to change without notice. –2– REV. D Document Outline GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAMS SIMILAR LOW POWER PRODUCTS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS Typical Performance Characteristics BASIC OPERATION OUTLINE DIMENSIONS ORDERING GUIDE REVISION HISTORY