Datasheet AD8397 (Analog Devices) - 8

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AD8397 ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION Table 5.
The maximum power that can be dissipated safely by the AD8397
Parameter Rating
is limited by the associated rise in junction temperature. The Supply Voltage 26.4 V maximum safe junction temperature for plastic encapsulated Power Dissipation1 See Figure 4 devices is determined by the glass transition temperature of the Storage Temperature Range −65°C to +125°C plastic, approximately 150°C. Temporarily exceeding this limit Operating Temperature Range −40°C to +85°C may cause a shift in parametric performance due to a change in Lead Temperature (Soldering, 10 sec) 300°C the stresses exerted on the die by the package. Junction Temperature 150°C
4.5
Stresses above those listed under Absolute Maximum Ratings
TJ = 150°C
may cause permanent damage to the device. This is a stress
4.0 ) W
rating only; functional operation of the device at these or any
( 3.5 N
other conditions above those indicated in the operational
IO T A 3.0
section of this specification is not implied. Exposure to absolute
IP ISS 2.5
maximum rating conditions for extended periods may affect
D R
device reliability.
E 2.0 W O
1 Thermal resistance for standard JEDEC 4-layer board:
1.5 M P
8-lead SOIC_N: θJA = 157.6°C/W
8-LEAD SOIC MU
8-Lead SOIC_N_EP: θJA = 47.2°C/W
1.0 XI MA 0.5
0 02 9- 06
0
05
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. A | Page 7 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION POWER SUPPLY AND DECOUPLING LAYOUT CONSIDERATIONS UNITY-GAIN OUTPUT SWING CAPACITIVE LOAD DRIVE OUTLINE DIMENSIONS ORDERING GUIDE