Datasheet IRF9530NPbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 231 Kb |
| Idioma del documento | Inglés |
Fig 10a. Fig 9. Fig 10b. Fig 11
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IRF9530NPbF 14 R V D DS 12 VGS D.U.T. R 10 G -+ VDD 8 -10V Pulse Width ≤ 1 µs n Current (A) Duty Factor ≤ 0.1 % 6 D 4
Fig 10a.
Switching Time Test Circuit -I , Drai 2 td(on) tr td(off) tf VGS 0 10% 25 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 10 ) thJC (Z 1 D = 0.50 0.20 esponse 0.10 0.05 PDM al R 0.1 m 0.02 SINGLE PULSE t1 0.01 (THERMAL RESPONSE) t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak T J= P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a.
Switching Time Test Circuit -I , Drai 2 td(on) tr td(off) tf VGS 0 10% 25 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 10 ) thJC (Z 1 D = 0.50 0.20 esponse 0.10 0.05 PDM al R 0.1 m 0.02 SINGLE PULSE t1 0.01 (THERMAL RESPONSE) t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak T J= P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case