Datasheet IRF9530NPbF (Infineon) - 2
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 231 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRF9530NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.11 V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance 0.20 Ω VGS = -10V, ID = -8.4A VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.2 S VDS = -50V, ID = -8.4A -25 IDSS Drain-to-Source Leakage Current µA VDS = -100V, VGS = 0V -250 VDS = -80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 58 ID = -8.4A Qgs Gate-to-Source Charge 8.3 nC VDS = -80V Qgd Gate-to-Drain ("Miller") Charge 32 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 15 VDD = -50V tr Rise Time 58 ID = -8.4A ns td(off) Turn-Off Delay Time 45 RG = 9.1Ω tf Fall Time 46 RD = 6.2Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance 4.5 6mm (0.25in.) nH from package G LS Internal Source Inductance 7.5 and center of die contact S Ciss Input Capacitance 760 VGS = 0V Coss Output Capacitance 260 pF VDS = -25V Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D -14 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G (Body Diode) -56 p-n junction diode. S VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = -8.4A Qrr Reverse RecoveryCharge 650 970 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C Starting TJ = 25°C, L = 7.0mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -8.4A. (See Figure 12)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.11 V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance 0.20 Ω VGS = -10V, ID = -8.4A VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.2 S VDS = -50V, ID = -8.4A -25 IDSS Drain-to-Source Leakage Current µA VDS = -100V, VGS = 0V -250 VDS = -80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 58 ID = -8.4A Qgs Gate-to-Source Charge 8.3 nC VDS = -80V Qgd Gate-to-Drain ("Miller") Charge 32 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 15 VDD = -50V tr Rise Time 58 ID = -8.4A ns td(off) Turn-Off Delay Time 45 RG = 9.1Ω tf Fall Time 46 RD = 6.2Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance 4.5 6mm (0.25in.) nH from package G LS Internal Source Inductance 7.5 and center of die contact S Ciss Input Capacitance 760 VGS = 0V Coss Output Capacitance 260 pF VDS = -25V Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D -14 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G (Body Diode) -56 p-n junction diode. S VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = -8.4A Qrr Reverse RecoveryCharge 650 970 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C Starting TJ = 25°C, L = 7.0mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -8.4A. (See Figure 12)