Datasheet IDT04S60C - Infineon DIODE, SCHOTTKY, 4 A, TO-220 — Ficha de datos

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Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 4 A, TO-220

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Docket:
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery/ No forward recovery · No temperature influence on the switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 8 4 V nC A
PG-TO220-2-2

Specifications:

• Current If @ Vf: 4 A
• Current Ifsm: 32 A
• Diode Type: Schottky
• Forward Current If(AV): 4 A
• Forward Surge Current Ifsm Max: 32 A
• Forward Voltage VF Max: 1.9 V
• Forward Voltage: 1.9 V
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• Number of Pins: 2
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220
• Pin Configuration: 1(K), 2(A)
• Repetitive Reverse Voltage Vrrm Max: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5
• Multicomp - MK3306