Datasheet IDT10S60C - Infineon DIODE, SCHOTTKY, 10 A, TO-220 — Ficha de datos

Descripción detallada

Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 10 A, TO-220

Download Data Sheet

Docket:
IDT10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery/ No forward recovery · No temperature influence on the switching behavior · High surge current capability · Pb-free lead plating; RoHs compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 24 10 V nC A
PG-TO220-2-2

Specifications:

• Current If @ Vf: 10 A
• Current Ifsm: 84 A
• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 84 A
• Forward Voltage VF Max: 1.7 V
• Forward Voltage: 1.7 V
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• Number of Pins: 2
• Operating Temperature Range: -55пїЅпїЅC to +175°C
• Package / Case: TO-220
• Pin Configuration: 1(K), 2(A)
• Repetitive Reverse Voltage Vrrm Max: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5
• Multicomp - MK3306