Datasheet MURT40060R - Genesic Semiconductor DIODE, RECTIF, 600 V, 400 A, THREE TOWER — Ficha de datos

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Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 600 V, 400 A, THREE TOWER

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Docket:
MURT40040 thru MURT40060R
Silicon Super Fast Recovery Diode
Features
· High Surge Capability · Types up to 600 V VRRM Three Tower Package
VRRM = 50 V - 600 V IF = 400 A

Specifications:

• Diode Type: Fast Recovery
• Forward Current If(AV): 200 A
• Forward Surge Current Ifsm Max: 3.3kA
• Forward Voltage VF Max: 1.7 V
• Number of Pins: 3
• Operating Temperature Range: -40°C to +175°C
• Package / Case: Three Tower
• Repetitive Reverse Voltage Vrrm Max: 600 V
• Reverse Recovery Time trr Max: 240 ns

Accessories:

• Electrolube - HTS35SL
• H S MARSTON - 96CN-01500-A-200
• Multicomp - MK3311