Datasheet IDH10S60C - Infineon DIODE, SCHOTTKY, 600 V, 10 A, TO220-2 — Ficha de datos

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Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 600 V, 10 A, TO220-2

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Docket:
IDH10S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery/ No forward recovery · No temperature influence on the switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 24 10 V nC A
thinQ! 2G Diode specially designed for fast switching applications like: · CCM PFC · Motor Drives Type IDH10S60C Package PG-TO220-2 Marking D10S60C Pin 1 C Pin 2 A

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 84 A
• Forward Voltage VF Max: 1.7 V
• Number of Pins: 2
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220
• Repetitive Reverse Voltage Vrrm Max: 600 V
• Reverse Recovery Time trr Max: 10 ns

RoHS: Yes

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