Datasheet IDH10S120 - Infineon DIODE, SCHOTTKY, 1200 V, 10 A, TO220-2 — Ficha de datos

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Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 1200 V, 10 A, TO220-2

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Docket:
IDH10S120
thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery / No forward recovery · Temperature independent switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Optimized for high temperature operation · Lowest Figure of Merit QC/IF PG-TO220-2 Product Summary VDC QC IF; TC< 130 °C 1200 600 3.2 36 10 3 V nC A
thinQ!TM Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS
Type IDH10S120

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 58 A
• Forward Voltage VF Max: 1.8 V
• Number of Pins: 2
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220
• Repetitive Reverse Voltage Vrrm Max: 1.2 kV
• Reverse Recovery Time trr Max: 10 ns

RoHS: Yes

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