Datasheet IDD10SG60C - Infineon DIODE, SCHOTTKY, 600 V, 10 A, TO252-3 — Ficha de datos

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Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 600 V, 10 A, TO252-3

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Docket:
IDD10SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery / No forward recovery · Temperature independent switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 20mA2) · Optimized for high temperature operation · Lowest Figure of Merit QC/IF · Halogen-free according to IEC 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDD10SG60C Package PG-TO252-3 Marking D10G60C Pin 1 n.c.

Pin 2 A Pin 3 C Product Summary V DC QC I F; T C< 130 °C 600 16 10 V nC A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 51 A
• Forward Voltage VF Max: 2.1 V
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-252
• Repetitive Reverse Voltage Vrrm Max: 600 V
• Reverse Recovery Time trr Max: 10 ns

RoHS: Yes

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