Datasheet HSCH-5330 - Avago Technologies DIODE, SCHOTTKY — Ficha de datos

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Manufacturer: Avago Technologies

Description: DIODE, SCHOTTKY

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Docket:
HSCH-53xx Series
Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz)
Data Sheet
Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331. T

Specifications:

• Diode Type: Schottky
• Forward Voltage VF Max: 375 mV
• Junction Temperature Tj Max: 175°C
• Operating Temperature Range: -65°C to +175°C
• Package / Case: 07
• Repetitive Reverse Voltage Vrrm Max: 4 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

Otros nombres:

HSCH5330, HSCH 5330