Datasheet MBRF10H150CT - Taiwan Semiconductor DIODE, SCHOTTKY, 10 A, 150 V — Ficha de datos

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Manufacturer: Taiwan Semiconductor

Description: DIODE, SCHOTTKY, 10 A, 150 V

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Docket:
MBRF10H150CTG SWITCHMODETM Power Rectifier 150 V, 10 A
Features and Benefits
· · · · · ·
Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard-Ring for Stress Protection This is a Pb-Free Device
http://onsemi.com

Specifications:

• Current Ifsm: 120 A
• Current Ir Max: 5 µA
• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 120 A
• Forward Voltage VF Max: 970 mV
• Forward Voltage: 880 mV
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -65°C
• Mounting Type: Through Hole
• Number of Pins: 3
• Package / Case: TO-220FP
• Pin Configuration: 1(A1), 2(K1+K2), 3(A2)
• Repetitive Reverse Voltage Vrrm Max: 150 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

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