Datasheet ON Semiconductor MBR360G — Ficha de datos

DATA SHEET
www.onsemi.com Axial Lead Rectifiers
MBR350, MBR360
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes. SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS Features Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Pb−Free Packages are Available* AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1 Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage Symbol MBR350 …