Datasheet MBR10H100CTG - ON Semiconductor DIODE, SCHOTTKY, 10 A, 100 V, TO-220 — Ficha de datos

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Manufacturer: ON Semiconductor

Description: DIODE, SCHOTTKY, 10 A, 100 V, TO-220

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Docket:
MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A
Features and Benefits
· · · · · · ·
Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total (5.0 A Per Diode Leg) Guard-Ring for Stress Protection Pb-Free Package is Available
http://onsemi.com

Simulation Model

Specifications:

• Current Ifsm: 180 A
• Current Ir Max: 3.5 µA
• Diode Configuration: Dual Common Cathode
• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 180 A
• Forward Voltage VF Max: 850 mV
• Forward Voltage: 730 mV
• Junction Temperature Tj Max: 175°C
• Mounting Type: Through Hole
• Number of Pins: 3
• Package / Case: TO-220
• Repetitive Reverse Voltage Vrrm Max: 100 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Taiwan Semiconductor - MBRF10H100CT