Datasheet PBSS4140DPN - NXP TRANSISTOR, SOT-457 — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: TRANSISTOR, SOT-457

Download Data Sheet

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 250 V
• Continuous Collector Current Ic Max: 1 A
• Current Ic @ Vce Sat: 50 mA
• Current Ic Continuous a Max: 1 A
• DC Collector Current: -1 A
• DC Current Gain Min: 300
• DC Current Gain: 300
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 150 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65пїЅпїЅC to +150°C
• Package / Case: SOT-457
• Power Dissipation Pd: 370 mW
• Power Dissipation Ptot Max: 750 mW
• Power Dissipation per device Max: 750 mW
• SMD Marking: M2
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-457
• Transistor Polarity: NPN / PNP
• Voltage Vcbo: 40 V

RoHS: Yes