Datasheet SI9933BDY - Vishay MOSFET, DUAL, PP, SO-8 — Ficha de datos
Part Number: SI9933BDY
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, DUAL, PP, SO-8
Docket:
Si9933BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.06 at VGS = - 4.5 V 0.10 at VGS = - 2.5 V ID (A) - 4.7 - 3.7
Specifications:
- Continuous Drain Current Id: 3.6 A
- Current Id Max: -3.6 A
- Drain Source Voltage Vds: 20 V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 2
- On Resistance Rds(on): 60 MOhm
- On State Resistance @ Vgs = 2.5V: 100 MOhm
- On State Resistance @ Vgs = 4.5V: 60 MOhm
- Operating Temperature Range: -55°C to +150°C
- P Channel Gate Charge: 6nC
- Package / Case: SOIC
- Power Dissipation Pd: 1.1 W
- Pulse Current Idm: 40 A
- Rds(on) Test Voltage Vgs: -4.5 V
- Threshold Voltage Vgs Typ: -1.4 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Voltage Vds Typ: -20 V
- Voltage Vgs Max: -12 V
- Voltage Vgs Rds on Measurement: 4.5 V
RoHS: Yes