Datasheet SI7922DN - Vishay MOSFET, DUAL, NN, POWERPAK — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, DUAL, NN, POWERPAK

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Simulation Model

Specifications:

• Continuous Drain Current Id: 1.8 A
• Current Id Max: 1.8 A
• Current Temperature: 25°C
• Device Marking: SI7922DN
• Drain Source Voltage Vds: 100 V
• External Depth: 5.15 mm
• External Length / Height: 1.07 mm
• External Width: 6.15 mm
• Fall Time tf: 11 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 4.3 °C/W
• Module Configuration: Dual
• Mounting Type: SMD
• N-channel Gate Charge: 5.2nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 162 MOhm
• On State Resistance Max: 195 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.3 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 11 ns
• Threshold Voltage Vgs Typ: 3.5 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Turn Off Time: 8 ns
• Turn On Time: 7 ns
• Voltage Vds Typ: 100 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 2.5 V

RoHS: Yes