Datasheet SI4948BEY - Vishay MOSFET, DUAL, PP, SO-8 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

Download Data Sheet

Simulation Model

Specifications:

• Continuous Drain Current Id: 2.4 A
• Current Id Max: -2.4 A
• Drain Source Voltage Vds: 60 V
• Fall Time tf: 35 ns
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 120 MOhm
• On State Resistance @ Vgs = 4.5V: 150 MOhm
• On State resistance @ Vgs = 10V: 120 MOhm
• Operating Temperature Range: -55°C to +175°C
• P Channel Gate Charge: 14.5nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.4 W
• Pulse Current Idm: 25 A
• Rds(on) Test Voltage Vgs: -10 V
• Rise Time: 15 ns
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Turn Off Time: 50 ns
• Turn On Time: 10 ns
• Voltage Vds Typ: -60 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes