Datasheet SI4804BDY - Vishay MOSFET, DUAL, NN, SO-8 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

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Simulation Model

Specifications:

• Continuous Drain Current Id: 7.5 A
• Current Id Max: 5.7 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• N-channel Gate Charge: 7nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 22 MOhm
• On State Resistance @ Vgs = 10V N Channel: 22 MOhm
• On State Resistance @ Vgs = 4.5V: 30 MOhm
• On State resistance @ Vgs = 10V: 22 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.1 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes