Datasheet SI4816BDY-T1-GE3 - Vishay MOSFET, NN CH, 30 V, 8SOIC — Ficha de datos

Vishay SI4816BDY-T1-GE3

Part Number: SI4816BDY-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, NN CH, 30 V, 8SOIC

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Docket:
Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.0185 at VGS = 10 V 0.0225 at VGS = 4.5 V 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 6.8 6.0 11.4 9.5 Qg (Typ.) 7.8 11.6

Specifications:

  • Continuous Drain Current Id: 5.8 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0155 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: Dual N Channel
  • RoHS: Y-Ex

Otros nombres:

SI4816BDYT1GE3, SI4816BDY T1 GE3