Datasheet SI4816BDY-T1-GE3 - Vishay MOSFET, NN CH, 30 V, 8SOIC — Ficha de datos
Part Number: SI4816BDY-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, NN CH, 30 V, 8SOIC
Docket:
Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.0185 at VGS = 10 V 0.0225 at VGS = 4.5 V 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 6.8 6.0 11.4 9.5 Qg (Typ.) 7.8 11.6
Specifications:
- Continuous Drain Current Id: 5.8 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On Resistance Rds(on): 0.0155 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 1 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: Dual N Channel
- RoHS: Y-Ex
Otros nombres:
SI4816BDYT1GE3, SI4816BDY T1 GE3