Datasheet SI3900DV-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 20 V, 2.4 A — Ficha de datos
Part Number: SI3900DV-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: DUAL N CHANNEL MOSFET, 20 V, 2.4 A
Specifications:
- Continuous Drain Current Id: 2.4 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 125 MOhm
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Polarity: N Channel
RoHS: Yes
Otros nombres:
SI3900DVT1GE3, SI3900DV T1 GE3