Datasheet SIB911DK-T1-GE3 - Vishay MOSFET, DUAL, PP, PPAK SC-75 — Ficha de datos
Part Number: SIB911DK-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, DUAL, PP, PPAK SC-75
Docket:
New Product
SiB911DK
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 2.6 A
- Current Id Max: -2.6 A
- Drain Source Voltage Vds: -20 V
- Junction Temperature Tj Max: 150°C
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 6
- On Resistance Rds(on): 295 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SC-75
- Power Dissipation: 3.1 W
- Rds(on) Test Voltage Vgs: 8 V
- Rise Time: 45 ns
- SVHC: No SVHC (20-Jun-2011)
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: SC-75
- Transistor Polarity: P Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Max: -1 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: 1 V
- Voltage Vgs th Min: 0.4 V
RoHS: Yes
Otros nombres:
SIB911DKT1GE3, SIB911DK T1 GE3