Datasheet SI4936CDY-T1-GE3 - Vishay MOSFET, NN-CH, 30 V, 5.8 A, SO8 — Ficha de datos
Part Number: SI4936CDY-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, NN-CH, 30 V, 5.8 A, SO8
Docket:
New Product
Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 5.8 A
- Drain Source Voltage Vds: 30 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 33 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 2.3 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOIC
- Transistor Polarity: Dual N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Otros nombres:
SI4936CDYT1GE3, SI4936CDY T1 GE3