Datasheet SI4922BDY-T1-E3 - Vishay MOSFET, DUAL, N, SOIC — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SOIC

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Specifications:

• Base Number: 4922
• Continuous Drain Current Id: 8 A
• Current Id Max: 8 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• N-channel Gate Charge: 19nC
• Number of Pins: 8
• On Resistance Rds(on): 16 MOhm
• On State Resistance @ Vgs = 2.5V: 24 MOhm
• On State Resistance @ Vgs = 4.5V: 18 MOhm
• On State resistance @ Vgs = 10V: 16 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 12 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.8 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A
• Roth Elektronik - RE932-01

Otros nombres:

SI4922BDYT1E3, SI4922BDY T1 E3