Datasheet SI4500BDY-T1-GE3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, 5.3 A — Ficha de datos
Part Number: SI4500BDY-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: DUAL N/P CHANNEL MOSFET, 20 V, 5.3 A
Docket:
Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V 0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A) 9.1 7.5 - 5.3 - 4.1
Specifications:
- Continuous Drain Current Id: 7 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 22 MOhm
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Polarity: Dual N & P Channel
RoHS: Y-Ex
Otros nombres:
SI4500BDYT1GE3, SI4500BDY T1 GE3