Datasheet IRF7303QPBF - International Rectifier MOSFET, NN SO-8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, NN SO-8

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Docket:
PD - 96103
IRF7303QPbF
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free

Specifications:

• Continuous Drain Current Id: 4.9 A
• Current Id Max: 4.9 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 50 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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