Datasheet FDG6304P - Fairchild TRANSISTOR, MOSFET — Ficha de datos

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Manufacturer: Fairchild

Description: TRANSISTOR, MOSFET

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Docket:
July 1999
FDG6304P Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features

Specifications:

• Continuous Drain Current Id, P Channel: -410 mA
• Continuous Drain Current Id: -410 mA
• Current Id Max: -410 mA
• Drain Source Voltage Vds, P Channel: -25 V
• Drain Source Voltage Vds: -25 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), P Channel: 0.85 Ohm
• On Resistance Rds(on): 1.1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-70
• Power Dissipation: 300 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -820 mV
• Transistor Case Style: SC-70
• Transistor Polarity: P Channel
• Voltage Vds Typ: -25 V
• Voltage Vgs Max: -820 mV
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes