Datasheet FDC6561AN - Fairchild MOSFET, DUAL, NN, SUPERSOT-6 — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, DUAL, NN, SUPERSOT-6

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Docket:
April 1999
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
2.5 A, 30 V.

RDS(ON) = 0.095 @ VGS = 10 V RDS(ON) = 0.145 @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Specifications:

• Continuous Drain Current Id: 2.5 A
• Current Id Max: 2.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 2
• On Resistance Rds(on): 95 MOhm
• Package / Case: SuperSOT-6
• Power Dissipation Pd: 960 mW
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: FDC6561AN
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SuperSOT
• Transistor Polarity: N Channel
• Uni / Bi Directional Polarity: NN
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 1.8 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V

RoHS: Yes