Datasheet FDC6320C - Fairchild MOSFET, NP — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, NP

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Docket:
October 1997
FDC6320C Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
Features

Specifications:

• Cont Current Id N Channel: 0.22 A
• Cont Current Id P Channel: 120 mA
• Continuous Drain Current Id: 220 mA
• Current Id Max: 220 mA
• Drain Source Voltage Vds: 25 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 5 Ohm
• On State Resistance N Channel Max: 4 Ohm
• On State Resistance P Channel Max: 10 Ohm
• Package / Case: SuperSOT-6
• Power Dissipation: 900 mW
• Rds(on) Test Voltage Vgs: 2.7 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SuperSOT
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 850 mV
• Voltage Vgs Rds N Channel: 4.5 V
• Voltage Vgs Rds P Channel: 4.5 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th N Channel 1 Min: 0.65 V
• Voltage Vgs th P Channel Max: -1.5 V
• Voltage Vgs th P Channel Min: -0.65 V

RoHS: Yes