Datasheet FDC6303N - Fairchild MOSFET, DUAL, N, SMD, SUPERSOT-6 — Ficha de datos

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Manufacturer: Fairchild

Description: MOSFET, DUAL, N, SMD, SUPERSOT-6

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Docket:
August 1997
FDC6303N Digital FET, Dual N-Channel
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Features

Specifications:

• Continuous Drain Current Id: 680 mA
• Current Id Max: 680 mA
• Drain Source Voltage Vds: 25 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 450 MOhm
• Package / Case: SuperSOT-6
• Power Dissipation Pd: 900 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: SuperSOT
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 800 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes