Datasheet DMS3019SSD-13 - Diodes MOSFET, +SCH, NN CH, 30 V, SO8 — Ficha de datos

Diodes DMS3019SSD-13

Part Number: DMS3019SSD-13

Descripción detallada

Manufacturer: Diodes

Description: MOSFET, +SCH, NN CH, 30 V, SO8

Docket:
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
· DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: · Low RDS(on) minimizes conduction loss · Low VSD reducing the losses due to body diode construction · Low Qrr lower Qrr of the integrated Schottky reduces body diode switching losses · Low gate capacitance (Qg/Qgs) ratio reduces risk of shootthrough or cross conduction currents at high frequencies · Avalanche rugged IAR and EAR rated Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

Continuous Drain Current Id, N Channel: 7 A
Current Id Max: 9 A
Drain Source Voltage Vds, N Channel: 30 V
Drain Source Voltage Vds: 30 V
Module Configuration: Dual
Number of Pins: 8
On Resistance Rds(on), N Channel: 0.01 Ohm
On Resistance Rds(on): 10 MOhm
Operating Temperature Range: -55°C to +150°C
Power Dissipation: 1.19 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (20-Jun-2011)
Threshold Voltage Vgs Typ: 2.4 V
Transistor Case Style: SOIC
Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

DMS3019SSD13, DMS3019SSD 13