Datasheet BSS8402DW-7-F - Diodes MOSFET, NP, CH, 60 V, SOT-363 — Ficha de datos
Part Number: BSS8402DW-7-F
Descripción detallada
Manufacturer: Diodes
Description: MOSFET, NP, CH, 60 V, SOT-363
Docket:
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
· · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) Qualified to AEC-Q101 Standards for High Reliability
Specifications:
- Continuous Drain Current Id, N Channel: 115 mA
- Continuous Drain Current Id, P Channel: -130 mA
- Continuous Drain Current Id: 115 mA
- Current Id Max: 800 mA
- Drain Source Voltage Vds, N Channel: 60 V
- Drain Source Voltage Vds, P Channel: -50 V
- Drain Source Voltage Vds: 60 V
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 6
- On Resistance Rds(on), N Channel: 3.2 Ohm
- On Resistance Rds(on), P Channel: 10 Ohm
- On Resistance Rds(on): 13.5 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-363
- Power Dissipation: 200 mW
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (20-Jun-2011)
- Threshold Voltage Vgs Typ: 2.5 V
- Transistor Case Style: SOT-363
- Transistor Polarity: N and P Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: 60 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Otros nombres:
BSS8402DW7F, BSS8402DW 7 F